N-Channel MOSFET, 99 A, 650 V TO247-4L onsemi NTH4L025N065SC1
- RS Stock No.:
- 254-7670P
- Mfr. Part No.:
- NTH4L025N065SC1
- Manufacturer:
- onsemi
450 In stock for delivery within 3 working days
Added
Price Each (Supplied in a Tube)
HK$144.49
| Units | Per unit |
| 10 - 99 | HK$144.49 |
| 100 - 249 | HK$138.01 |
| 250 - 349 | HK$135.25 |
| 350 + | HK$132.55 |
- RS Stock No.:
- 254-7670P
- Mfr. Part No.:
- NTH4L025N065SC1
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L
The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in telecommunication
Ultra low gate charge
High speed switching and low capacitance
Ultra low gate charge
High speed switching and low capacitance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 99 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO247-4L |
| Mounting Type | Through Hole |