N-Channel MOSFET, 58 A, 1200 V D2PAK-7L onsemi NTBG022N120M3S
- RS Stock No.:
- 254-7661P
- Mfr. Part No.:
- NTBG022N120M3S
- Manufacturer:
- onsemi
799 In stock for delivery within 3 working days
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$131.67
| Units | Per unit |
| 10 - 99 | HK$131.67 |
| 100 - 249 | HK$125.75 |
| 250 - 499 | HK$123.23 |
| 500 + | HK$120.77 |
- RS Stock No.:
- 254-7661P
- Mfr. Part No.:
- NTBG022N120M3S
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
The ON Semiconductor NTB series of planar sic mosfets is optimized for fast switching applications with a planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
100% avalanche tested
Improved power density
Gate drive voltage 15V to 18V
Improved power density
Gate drive voltage 15V to 18V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 58 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | D2PAK-7L |
| Mounting Type | Surface Mount |