SiC N-Channel MOSFET, 46 A, 650 V, 4-Pin TO-247-4 onsemi NTH4L060N090SC1
- RS Stock No.:
- 229-6463P
- Mfr. Part No.:
- NTH4L060N090SC1
- Manufacturer:
- onsemi
228 In stock for delivery within 3 working days
Added
Price Each (Supplied in a Tube)
HK$91.20
| Units | Per unit |
| 10 - 49 | HK$91.20 |
| 50 - 99 | HK$88.39 |
| 100 - 224 | HK$86.50 |
| 225 + | HK$84.62 |
- RS Stock No.:
- 229-6463P
- Mfr. Part No.:
- NTH4L060N090SC1
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 46 A |
| Maximum Drain Source Voltage | 650 V |
| Series | SiC Power |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 0.084 Ω |
| Maximum Gate Threshold Voltage | 4.3V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |