N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 ON Semiconductor NTMYS7D3N04CLTWG
- RS Stock No.:
- 195-2524
- Mfr. Part No.:
- NTMYS7D3N04CLTWG
- Manufacturer:
- onsemi
On back order for despatch 10/06/2024, delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$12.438
| Units | Per unit | Per Reel* |
| 3000 - 3000 | HK$12.438 | HK$37,314.00 |
| 6000 - 9000 | HK$12.189 | HK$36,567.00 |
| 12000 + | HK$11.946 | HK$35,838.00 |
| *price indicative | ||
- RS Stock No.:
- 195-2524
- Mfr. Part No.:
- NTMYS7D3N04CLTWG
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 52 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | LFPAK, SOT-669 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 12 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 38 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 7 nC @ 4.5 V |
| Length | 5mm |
| Maximum Operating Temperature | +175 °C |
| Width | 4.25mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.15mm |
| Forward Diode Voltage | 1.2V |