- RS Stock No.:
- 189-0397
- Mfr. Part No.:
- NTHL033N65S3HF
- Manufacturer:
- onsemi
450 In stock for delivery within 3 working days
Added
Price Each
HK$149.54
Units | Per unit |
1 - 7 | HK$149.54 |
8 - 14 | HK$145.81 |
15 + | HK$143.56 |
- RS Stock No.:
- 189-0397
- Mfr. Part No.:
- NTHL033N65S3HF
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 188 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 28 mΩ
Benefits
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Lower switching loss
Higher system reliability at low temperature operation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
Ultra Low Gate Charge (Typ. Qg = 188 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 28 mΩ
Benefits
Lower peak Vds and lower Vgs oscillation
Higher system reliability in LLC and Phase shift full bridge circuit
Lower switching loss
Higher system reliability at low temperature operation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 70 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 33 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 500 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Typical Gate Charge @ Vgs | 188 nC @ 10 V |
Width | 4.82mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Length | 15.87mm |
Forward Diode Voltage | 1.3V |
Minimum Operating Temperature | -55 °C |
Height | 20.82mm |