Dual N/P-Channel MOSFET, ±1 (PChannel) A, ±1.4 (NChannel) A, 20 V, 6-Pin TUMT ROHM US6M1TR
- RS Stock No.:
- 183-5564
- Mfr. Part No.:
- US6M1TR
- Manufacturer:
- ROHM
Discontinued product
- RS Stock No.:
- 183-5564
- Mfr. Part No.:
- US6M1TR
- Manufacturer:
- ROHM
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Nch+Pch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Fast Switching Speed
Small Surface Mount Package
Pb Free
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | ±1 (PChannel) A, ±1.4 (NChannel) A |
| Maximum Drain Source Voltage | 20 V |
| Series | US6M1 |
| Package Type | TUMT |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 800 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation | 1 W |
| Maximum Gate Source Voltage | +20 (N-Channel) V, -12 (P-Channel) V |
| Width | 1.7mm |
| Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V |
| Maximum Operating Temperature | 150 °C |
| Length | 2mm |
| Number of Elements per Chip | 2 |
| Forward Diode Voltage | 1.2V |
| Height | 0.75mm |