N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiSS12DN-T1-GE3
- RS Stock No.:
- 178-3920P
- Mfr. Part No.:
- SiSS12DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 27/06/2024, delivery within 3 working days
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$7.004
| Units | Per unit |
| 750 - 1490 | HK$7.004 |
| 1500 + | HK$6.895 |
- RS Stock No.:
- 178-3920P
- Mfr. Part No.:
- SiSS12DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 40 V |
| Series | TrenchFET |
| Package Type | PowerPAK 1212-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 65.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Typical Gate Charge @ Vgs | 59 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 3.15mm |
| Number of Elements per Chip | 1 |
| Width | 3.15mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.07mm |
| Forward Diode Voltage | 1.1V |