Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual Vishay Siliconix SQJ504EP-T1_GE3
- RS Stock No.:
- 178-3893
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (In a Pack of 10)
HK$8.911
| Units | Per unit | Per Pack* |
| 10 - 740 | HK$8.911 | HK$89.11 |
| 750 - 1490 | HK$8.688 | HK$86.88 |
| 1500 + | HK$8.555 | HK$85.55 |
| *price indicative | ||
- RS Stock No.:
- 178-3893
- Mfr. Part No.:
- SQJ504EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | PowerPak SO-8L Dual |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 34 W, 34 W |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V |
| Width | 5mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Length | 5.99mm |
| Automotive Standard | AEC-Q101 |
| Height | 1.07mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |