P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70-6L Vishay Siliconix SQA401EEJ-T1_GE3
- RS Stock No.:
- 178-3886P
- Mfr. Part No.:
- SQA401EEJ-T1_GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 06/05/2025, delivery within 3 working days
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$3.742
| Units | Per unit |
| 750 - 1475 | HK$3.742 |
| 1500 + | HK$3.684 |
- RS Stock No.:
- 178-3886P
- Mfr. Part No.:
- SQA401EEJ-T1_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 2.68 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SC-70-6L |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 200 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 13.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±8 V |
| Number of Elements per Chip | 1 |
| Width | 1.35mm |
| Typical Gate Charge @ Vgs | 4.2 nC @ 4.5 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 2.2mm |
| Height | 1mm |
| Forward Diode Voltage | 1.2V |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |