N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3
- RS Stock No.:
- 178-3877
- Mfr. Part No.:
- SQ2364EES-T1_GE3
- Manufacturer:
- Vishay Siliconix
175 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 25)
HK$4.034
| Units | Per unit | Per Pack* |
| 25 - 725 | HK$4.034 | HK$100.85 |
| 750 - 1475 | HK$3.933 | HK$98.325 |
| 1500 + | HK$3.872 | HK$96.80 |
| *price indicative | ||
- RS Stock No.:
- 178-3877
- Mfr. Part No.:
- SQ2364EES-T1_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.46V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±8 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 2 nC @ 4.5 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Length | 3.04mm |
| Width | 1.4mm |
| Forward Diode Voltage | 1.2V |
| Height | 1.02mm |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |