- RS Stock No.:
- 178-3853
- Mfr. Part No.:
- Si2319DDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 30/08/2024, delivery within 3 working days
Added
Price Each (In a Pack of 50)
HK$3.082
Units | Per unit | Per Pack* |
50 - 700 | HK$3.082 | HK$154.10 |
750 - 1450 | HK$3.005 | HK$150.25 |
1500 + | HK$2.959 | HK$147.95 |
*price indicative |
- RS Stock No.:
- 178-3853
- Mfr. Part No.:
- Si2319DDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen III p-channel power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 3.6 A |
Maximum Drain Source Voltage | 40 V |
Series | TrenchFET |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 100 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 1.7 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Width | 1.4mm |
Typical Gate Charge @ Vgs | 12.5 nC @ 10 V |
Length | 3.04mm |
Maximum Operating Temperature | +150 °C |
Height | 1.02mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |