N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK Vishay Siliconix SQM40016EM_GE3
- RS Stock No.:
- 178-3723
- Mfr. Part No.:
- SQM40016EM_GE3
- Manufacturer:
- Vishay Siliconix
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (On a Reel of 800)
HK$15.615
| Units | Per unit | Per Reel* |
| 800 - 3200 | HK$15.615 | HK$12,492.00 |
| 4000 + | HK$15.303 | HK$12,242.40 |
| *price indicative | ||
- RS Stock No.:
- 178-3723
- Mfr. Part No.:
- SQM40016EM_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- TW
Product Details
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 250 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | D2PAK (TO-263) |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 4.83mm |
| Typical Gate Charge @ Vgs | 163 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10.67mm |
| Forward Diode Voltage | 1.5V |
| Automotive Standard | AEC-Q101 |
| Height | 11.3mm |
| Minimum Operating Temperature | -55 °C |