Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay Siliconix
- RS Stock No.:
- 178-3705
- Mfr. Part No.:
- SIZF916DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
Discontinued product
- RS Stock No.:
- 178-3705
- Mfr. Part No.:
- SIZF916DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
FEATURES
TrenchFET® Gen IV power MOSFET
SkyFET® low-side MOSFET with integrated
Schottky
APPLICATIONS
CPU core power
Computer / server peripherals
POL
Synchronous buck converter
Telecom DC/DC
TrenchFET® Gen IV power MOSFET
SkyFET® low-side MOSFET with integrated
Schottky
APPLICATIONS
CPU core power
Computer / server peripherals
POL
Synchronous buck converter
Telecom DC/DC
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 40 (Channnel 1) A, 60 (Channel 2) A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAIR 6 x 5 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 6 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 26.6 W, 60 W |
| Maximum Gate Source Voltage | +16 V, +20 V, -12 V, -16 V |
| Typical Gate Charge @ Vgs | 14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 6mm |
| Number of Elements per Chip | 2 |
| Length | 5mm |
| Height | 0.7mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |