- RS Stock No.:
- 178-3689
- Mfr. Part No.:
- SiRA12BDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
Discontinued product
- RS Stock No.:
- 178-3689
- Mfr. Part No.:
- SiRA12BDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
TrenchFET® Gen IV power MOSFET
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 60 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SO-8 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 6 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.2V |
Minimum Gate Threshold Voltage | 2.4V |
Maximum Power Dissipation | 38 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +20 V |
Maximum Operating Temperature | +150 °C |
Length | 5.99mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 21 nC @ 10 V |
Width | 5mm |
Number of Elements per Chip | 1 |
Series | TrenchFET |
Minimum Operating Temperature | -55 °C |
Height | 1.07mm |
Forward Diode Voltage | 1.1V |