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    N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 Vishay Siliconix SiRA10BDP-T1-GE3

    RS Stock No.:
    178-3688
    Mfr. Part No.:
    SiRA10BDP-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Vishay Siliconix
    View all MOSFETs
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    Price Each (On a Reel of 3000)

    HK$3.434

    unitsPer unitPer Reel*
    3000 - 12000HK$3.434HK$10,302.00
    15000 +HK$3.09HK$9,270.00
    *price indicative
    RS Stock No.:
    178-3688
    Mfr. Part No.:
    SiRA10BDP-T1-GE3
    Manufacturer:
    Vishay Siliconix

    RoHS Status: Not Applicable

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    RoHS Status: Not Applicable


    Product Details

    TrenchFET® Gen IV power MOSFET



    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current60 A
    Maximum Drain Source Voltage30 V
    Package TypeSO-8
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance5 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1.2V
    Minimum Gate Threshold Voltage2.4V
    Maximum Power Dissipation43 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-16 V, +20 V
    Width5mm
    Number of Elements per Chip1
    Length5.99mm
    Transistor MaterialSi
    Maximum Operating Temperature+150 °C
    Typical Gate Charge @ Vgs24.1 nC @ 10 V
    Forward Diode Voltage1.1V
    SeriesTrenchFET
    Height1.07mm
    Minimum Operating Temperature-55 °C
    Available for back order.
    Add to Basket
    units

    This product is currently unavailable to backorder.

    Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

    Added

    Price Each (On a Reel of 3000)

    HK$3.434

    unitsPer unitPer Reel*
    3000 - 12000HK$3.434HK$10,302.00
    15000 +HK$3.09HK$9,270.00
    *price indicative