- RS Stock No.:
- 178-3667
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 27/10/2025, delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$2.929
Units | Per unit | Per Reel* |
3000 - 3000 | HK$2.929 | HK$8,787.00 |
6000 - 9000 | HK$2.871 | HK$8,613.00 |
12000 + | HK$2.813 | HK$8,439.00 |
*price indicative |
- RS Stock No.:
- 178-3667
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 12 A |
Maximum Drain Source Voltage | 60 V |
Series | TrenchFET |
Package Type | SC-70-6L |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 20 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 19 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Typical Gate Charge @ Vgs | 8.9 nC @ 10 V |
Length | 2.2mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 1.35mm |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Height | 1mm |