- RS Stock No.:
- 178-1507
- Mfr. Part No.:
- IRFU120NPBF
- Manufacturer:
- Infineon
4200 In stock for delivery within 3 working days
Added
Price Each (In a Tube of 75)
HK$5.99
Units | Per unit | Per Tube* |
75 - 75 | HK$5.99 | HK$449.25 |
150 - 225 | HK$5.86 | HK$439.50 |
300 + | HK$5.73 | HK$429.75 |
*price indicative |
- RS Stock No.:
- 178-1507
- Mfr. Part No.:
- IRFU120NPBF
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRFU120N is the 100V single N-channel power MOSFET in a I-Pak package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Surface Mount
Straight Lead
Fast switching
Lead free
Straight Lead
Fast switching
Lead free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 9.4 A |
Maximum Drain Source Voltage | 100 V |
Package Type | IPAK (TO-251) |
Series | HEXFET |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 210 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 48 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 25 nC @ 10 V |
Length | 6.6mm |
Transistor Material | Si |
Width | 2.3mm |
Height | 6.1mm |
Minimum Operating Temperature | -55 °C |