- RS Stock No.:
- 171-3634
- Mfr. Part No.:
- TSM6N60CP ROG
- Manufacturer:
- Taiwan Semiconductor
Discontinued product
- RS Stock No.:
- 171-3634
- Mfr. Part No.:
- TSM6N60CP ROG
- Manufacturer:
- Taiwan Semiconductor
Product overview and Technical data sheets
Legislation and Compliance
Product Details
The Taiwan Semiconductor 600V, 6A, 1. 25Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode.
High power and current handing capability.
Low RDS(ON) 1.25Ω (Max.)
Low gate charge typical @ 20.7nC (Typ.)
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
89W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Low RDS(ON) 1.25Ω (Max.)
Low gate charge typical @ 20.7nC (Typ.)
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
89W max. power dissipation
Gate threshold voltage ranges between 2V-4V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 6 A |
Maximum Drain Source Voltage | 600 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.25 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 89 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Width | 5.8mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 6.5mm |
Typical Gate Charge @ Vgs | 20.7 nC @ 10 V |
Forward Diode Voltage | 1.5V |
Height | 2.3mm |