N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 Toshiba TK20E60W,S1VX(S
- RS Stock No.:
- 168-7963
- Mfr. Part No.:
- TK20E60W,S1VX(S
- Manufacturer:
- Toshiba
On back order for despatch 18/10/2024, delivery within 3 working days
Added
Price Each (In a Tube of 50)
HK$33.522
| Units | Per unit | Per Tube* |
| 50 - 200 | HK$33.522 | HK$1,676.10 |
| 250 + | HK$30.17 | HK$1,508.50 |
| *price indicative | ||
- RS Stock No.:
- 168-7963
- Mfr. Part No.:
- TK20E60W,S1VX(S
- Manufacturer:
- Toshiba
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MOSFET N-Channel, TK2x Series, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 600 V |
| Series | TK |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 155 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 165 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V |
| Length | 10.16mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 4.45mm |
| Height | 15.1mm |