STP4NK60ZFP N-Channel MOSFET, 4 A, 600 V MDmesh, SuperMESH, 3-Pin TO-220FP STMicroelectronics

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 4 A
Maximum Drain Source Voltage 600 V
Package Type TO-220FP
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 2 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4.5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 25 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Width 4.6mm
Minimum Operating Temperature -55 °C
Length 10.4mm
Height 9.3mm
Typical Gate Charge @ Vgs 18.8 nC @ 10 V
Series MDmesh, SuperMESH
Transistor Material Si
500 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
HK$ 11.64
(exc. GST)
units
Per unit
Per Tube*
50 +
HK$11.64
HK$582.00
*price indicative
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