- RS Stock No.:
- 168-4470
- Mfr. Part No.:
- IXFH170N10P
- Manufacturer:
- IXYS
On back order for despatch 10/10/2024, delivery within 3 working days
Added
Price Each (In a Tube of 30)
HK$81.244
Units | Per unit | Per Tube* |
30 - 30 | HK$81.244 | HK$2,437.32 |
60 - 90 | HK$79.478 | HK$2,384.34 |
120 + | HK$77.711 | HK$2,331.33 |
*price indicative |
- RS Stock No.:
- 168-4470
- Mfr. Part No.:
- IXFH170N10P
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 170 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 9 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 714 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Length | 16.26mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 198 nC @ 10 V |
Width | 5.3mm |
Height | 21.46mm |
Minimum Operating Temperature | -55 °C |
Series | HiperFET, Polar |