Dual N-Channel MOSFET, 12 A, 16 A, 30 V, 8-Pin Power 33 onsemi FDMC7208S
- RS Stock No.:
- 166-2900
- Mfr. Part No.:
- FDMC7208S
- Manufacturer:
- onsemi
On back order for despatch 22/08/2024, delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$6.90
| Units | Per unit | Per Reel* |
| 3000 - 3000 | HK$6.90 | HK$20,700.00 |
| 6000 - 9000 | HK$6.762 | HK$20,286.00 |
| 12000 + | HK$6.627 | HK$19,881.00 |
| *price indicative | ||
- RS Stock No.:
- 166-2900
- Mfr. Part No.:
- FDMC7208S
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A, 16 A |
| Maximum Drain Source Voltage | 30 V |
| Series | PowerTrench, SyncFET |
| Package Type | Power 33 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 7.5 mΩ, 12.4 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 1.9 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, -12 V, +12 V, +20 V |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V, 14 nC @ 5 V, 26 nC @ 10 V, 6.7 nC @ 5 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 2 |
| Width | 3mm |
| Length | 3mm |
| Height | 0.75mm |
| Minimum Operating Temperature | -55 °C |