N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT
- RS Stock No.:
- 162-9739
- Mfr. Part No.:
- CSD19536KTTT
- Manufacturer:
- Texas Instruments
500 In stock for delivery within 3 working days
Added
Price Each (On a Reel of 50)
HK$38.797
| Units | Per unit | Per Reel* |
| 50 - 50 | HK$38.797 | HK$1,939.85 |
| 100 - 150 | HK$37.953 | HK$1,897.65 |
| 200 + | HK$37.11 | HK$1,855.50 |
| *price indicative | ||
- RS Stock No.:
- 162-9739
- Mfr. Part No.:
- CSD19536KTTT
- Manufacturer:
- Texas Instruments
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 272 A |
| Maximum Drain Source Voltage | 100 V |
| Series | NexFET |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 118 nC @ 0 V |
| Width | 9.65mm |
| Number of Elements per Chip | 1 |
| Height | 4.83mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.1V |