IRF4905SPBF P-Channel MOSFET, 74 A, 55 V HEXFET, 3-Pin D2PAK Infineon

  • RS Stock No. 124-8993
  • Mfr. Part No. IRF4905SPBF
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 74 A
Maximum Drain Source Voltage 55 V
Maximum Drain Source Resistance 20 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage -20 V, +20 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 3.8 W
Transistor Material Si
Length 10.54mm
Width 8.81mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 180 nC @ 10 V
Height 4.69mm
Series HEXFET
Maximum Operating Temperature +175 °C
700 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
HK$ 12.224
(exc. GST)
units
Per unit
Per Tube*
50 - 50
HK$12.224
HK$611.20
100 - 200
HK$11.613
HK$580.65
250 - 450
HK$11.032
HK$551.60
500 - 950
HK$10.481
HK$524.05
1000 +
HK$9.957
HK$497.85
*price indicative
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