IRF4905SPBF P-Channel MOSFET, 74 A, 55 V HEXFET, 3-Pin D2PAK Infineon

  • RS Stock No. 124-8993
  • Mfr. Part No. IRF4905SPBF
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute Value
Channel Type P
Maximum Continuous Drain Current 74 A
Maximum Drain Source Voltage 55 V
Maximum Drain Source Resistance 20 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage -20 V, +20 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 3.8 W
Length 10.54mm
Maximum Operating Temperature +175 °C
Typical Input Capacitance @ Vds 3400 pF@ 25 V
Height 4.69mm
Typical Gate Charge @ Vgs 180 nC @ 10 V
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Width 8.81mm
Typical Turn-On Delay Time 18 ns
Transistor Material Si
Typical Turn-Off Delay Time 61 ns
Dimensions 10.54 x 8.81 x 4.69mm
400 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
HK$ 12.224
(exc. GST)
Per unit
Per Tube*
50 - 50
100 - 200
250 - 450
500 - 950
1000 +
*price indicative