N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250MPBF

RS Stock No.:: 124-8762
Mfr. Part No.:: IRFP250MPBF
Manufacturer:: Infineon

N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250MPBF

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625 In stock for delivery within 3 working days

Added

Price Each (In a Tube of 25)

HK$12.027

Units	Per unit	Per Tube*
25 - 25	HK$12.027	HK$300.675
50 - 75	HK$11.766	HK$294.15
100 +	HK$11.505	HK$287.625
*price indicative

RS Stock No.:: 124-8762
Mfr. Part No.:: IRFP250MPBF
Manufacturer:: Infineon

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	200 V
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	214 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	16.13mm
Typical Gate Charge @ Vgs	123 nC @ 10 V
Number of Elements per Chip	1
Width	5.2mm
Minimum Operating Temperature	-55 °C
Series	HEXFET
Height	21.1mm