ON Semiconductor NCP51705MNTXG Full/Half Bridge Half Bridge MOSFET Power Driver, 6 (Sink) A, 6 (Source) A 24-Pin, QFN

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.

Allow independent Turn-ON/Turn-OFF Adjustment
Efficient SiC MOSFET Operation during the Conduction Period
Fast Turn-off and Robust dV/dt Immunity
Minimize complexity of bias supply in isolated gate drive applications
Sufficient VGS amplitude to match SiC best performance
Self protection of the design

Attribute Value
Number of Drivers 1
Minimum Operating Supply Voltage 10 V
Maximum Operating Supply Voltage 22 V
Topology Half Bridge
Mounting Type Surface Mount
Peak Output Current 6 (Sink) A, 6 (Source) A
Number of Outputs 1
Polarity Inverting, Non-Inverting
Package Type QFN
Pin Count 24
Bridge Type Full Bridge, Half Bridge
Input Logic Compatibility PWM
High and Low Sides Dependency Independent
Dimensions 4 x 4 x 0.95mm
Length 4mm
Input Bias Current 50µA
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +125 °C
Fall Time 15ns
Width 4mm
Time Delay 50ns
Rise Time 15ns
Height 0.95mm
2900 In stock for delivery within 3 working days
Price Each (In a Pack of 10)
HK$ 21.69
(exc. GST)
Per unit
Per Pack*
10 - 90
100 - 490
500 - 990
1000 +
*price indicative
Packaging Options: