Renesas NE3514S02-A N-Channel JFET, 4 V, Idss 15 → 70mA, 4-Pin SO2

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel HEMT, Renesas

A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Specifications
Attribute Value
Channel Type N
Idss Drain-Source Cut-off Current 15 → 70mA
Maximum Drain Source Voltage 4 V
Maximum Gate Source Voltage -3 V
Transistor Configuration Single
Configuration Single
Mounting Type Surface Mount
Package Type SO2
Pin Count 4
Dimensions 2.6 x 2.6 x 1.5mm
Length 2.6mm
Maximum Operating Temperature +125 °C
Height 1.5mm
Width 2.6mm
In stock for delivery within 3 working days
Price Each (In a Pack of 10)
HK$ 9.854
(exc. GST)
units
Per unit
Per Pack*
10 - 30
HK$9.854
HK$98.54
40 - 190
HK$9.654
HK$96.54
200 - 490
HK$8.978
HK$89.78
500 - 990
HK$8.206
HK$82.06
1000 +
HK$7.241
HK$72.41
*price indicative
Packaging Options:
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