ON Semiconductor 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 → 3mA, 3-Pin CP

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Specifications
Attribute Value
Channel Type N
Idss Drain-Source Cut-off Current 1.2 → 3mA
Maximum Drain Source Voltage 30 V
Maximum Drain Gate Voltage -30V
Transistor Configuration Single
Configuration Single
Maximum Drain Source Resistance 200 Ω
Mounting Type Surface Mount
Package Type CP
Pin Count 3
Drain Gate On-Capacitance 4pF
Source Gate On-Capacitance 1.1pF
Dimensions 2.9 x 1.5 x 1.1mm
Width 1.5mm
Maximum Operating Temperature +150 °C
Length 2.9mm
Height 1.1mm
3000 In stock for delivery within 3 working days
Price Each (On a Reel of 3000)
HK$ 0.563
(exc. GST)
units
Per unit
Per Reel*
3000 +
HK$0.563
HK$1,689.00
*price indicative
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