Infineon IRGP20B120U-EP IGBT, 40 A 1200 V, 3-Pin TO-247AD

  • RS Stock No. 907-4849
  • Mfr. Part No. IRGP20B120U-EP
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

Single IGBT over 21A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 300 W
Package Type TO-247AD
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.7mm
Width 5.1mm
Height 20.7mm
Dimensions 15.7 x 5.1 x 20.7mm
Minimum Operating Temperature -55 °C
Gate Capacitance 2200pF
Energy Rating 2425µJ
Maximum Operating Temperature +150 °C
4 In stock for delivery within 3 working days
Price Each (In a Pack of 4)
HK$ 44.215
(exc. GST)
Per unit
Per Pack*
4 - 16
20 - 96
100 - 196
200 - 496
500 +
*price indicative
Packaging Options: