STMicroelectronics STGP10M65DF2 IGBT, 20 A 650 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 906-2795
- Mfr. Part No.:
- STGP10M65DF2
- Manufacturer:
- STMicroelectronics
75 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$9.452
| Units | Per unit | Per Pack* |
| 5 - 10 | HK$9.452 | HK$47.26 |
| 15 - 20 | HK$9.214 | HK$46.07 |
| 25 + | HK$9.074 | HK$45.37 |
| *price indicative | ||
- RS Stock No.:
- 906-2795
- Mfr. Part No.:
- STGP10M65DF2
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 115 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 15.75mm |
| Energy Rating | 0.66mJ |
| Gate Capacitance | 840pF |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |