Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 891-2743
- Mfr. Part No.:
- GT40QR21,F(O
- Manufacturer:
- Toshiba
5 In stock for delivery within 3 working days
Added
Price Each
HK$46.07
| Units | Per unit |
| 1 - 19 | HK$46.07 |
| 20 - 49 | HK$44.91 |
| 50 - 99 | HK$43.79 |
| 100 - 249 | HK$42.69 |
| 250 + | HK$41.61 |
- RS Stock No.:
- 891-2743
- Mfr. Part No.:
- GT40QR21,F(O
- Manufacturer:
- Toshiba
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 2.5MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Energy Rating | 0.29mJ |
| Gate Capacitance | 1500pF |
| Maximum Operating Temperature | 175 °C |