ON Semiconductor NGTB10N60R2DT4G IGBT, 20 A 600 V, 3-Pin DPAK (TO-252)

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 20 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 72 W
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 6.73mm
Width 6.22mm
Height 2.38mm
Dimensions 6.73 x 6.22 x 2.38mm
Maximum Operating Temperature +175 °C
Gate Capacitance 1340pF
Discontinued product
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