ON Semiconductor FGD3N60UNDF IGBT, 6 A 600 V, 3-Pin DPAK (TO-252)

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 6 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 60 W
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 6.6mm
Width 6.1mm
Height 2.3mm
Dimensions 6.6 x 6.1 x 2.3mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
2660 In stock for delivery within 3 working days
Price Each (In a Pack of 10)
HK$ 5.885
(exc. GST)
units
Per unit
Per Pack*
10 - 40
HK$5.885
HK$58.85
50 - 490
HK$5.772
HK$57.72
500 - 990
HK$5.369
HK$53.69
1000 - 2490
HK$4.906
HK$49.06
2500 +
HK$4.329
HK$43.29
*price indicative
Packaging Options:
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