ON Semiconductor FGA40N65SMD IGBT, 80 A 650 V, 3-Pin TO-3PN

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 349 W
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.2mm
Width 5mm
Height 20.1mm
Dimensions 16.2 x 5 x 20.1mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
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Price Each (In a Pack of 2)
HK$ 30.315
(exc. GST)
units
Per unit
Per Pack*
2 - 18
HK$30.315
HK$60.63
20 - 98
HK$24.295
HK$48.59
100 - 448
HK$20.035
HK$40.07
450 - 898
HK$19.65
HK$39.30
900 +
HK$17.925
HK$35.85
*price indicative
Packaging Options:
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