ON Semiconductor ISL9V5045S3ST IGBT, 51 A 505 V, 3-Pin D2PAK (TO-263)

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 51 A
Maximum Collector Emitter Voltage 505 V
Maximum Gate Emitter Voltage ±14V
Maximum Power Dissipation 300 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.67mm
Width 9.65mm
Height 4.83mm
Dimensions 10.67 x 9.65 x 4.83mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
126 In stock for delivery within 3 working days
Price Each (In a Pack of 2)
HK$ 25.93
(exc. GST)
units
Per unit
Per Pack*
2 - 18
HK$25.93
HK$51.86
20 - 198
HK$18.495
HK$36.99
200 - 398
HK$16.08
HK$32.16
400 - 798
HK$15.315
HK$30.63
800 +
HK$14.585
HK$29.17
*price indicative
Packaging Options:
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