- RS Stock No.:
- 862-9353
- Mfr. Part No.:
- ISL9V3040S3ST
- Manufacturer:
- Fairchild Semiconductor
35 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$22.724
Units | Per unit | Per Pack* |
5 - 195 | HK$22.724 | HK$113.62 |
200 - 395 | HK$22.156 | HK$110.78 |
400 + | HK$21.82 | HK$109.10 |
*price indicative |
- RS Stock No.:
- 862-9353
- Mfr. Part No.:
- ISL9V3040S3ST
- Manufacturer:
- Fairchild Semiconductor
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 21 A |
Maximum Collector Emitter Voltage | 450 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 150 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 9.65 x 4.83mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |