STMicroelectronics STGW30H60DFB IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 860-7450
- Mfr. Part No.:
- STGW30H60DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 21/10/2024, delivery within 3 working days
Added
Price Each (In a Pack of 2)
HK$27.235
| Units | Per unit | Per Pack* |
| 2 - 6 | HK$27.235 | HK$54.47 |
| 8 - 14 | HK$26.55 | HK$53.10 |
| 16 + | HK$26.15 | HK$52.30 |
| *price indicative | ||
- RS Stock No.:
- 860-7450
- Mfr. Part No.:
- STGW30H60DFB
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 260 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |