STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 829-7136
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 01/04/2025, delivery within 3 working days
Added
Price Each
HK$54.35
| Units | Per unit |
| 1 - 24 | HK$54.35 |
| 25 - 99 | HK$52.99 |
| 100 - 249 | HK$51.68 |
| 250 + | HK$50.38 |
- RS Stock No.:
- 829-7136
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 469 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |