ON Semiconductor FGL35N120FTDTU IGBT, 70 A 1200 V, 3-Pin TO-264

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 70 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 368 W
Package Type TO-264
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 20.2mm
Width 5.2mm
Height 26.4mm
Dimensions 20.2 x 5.2 x 26.4mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Temporarily out of stock - back order for despatch when stock is available
Price Each
HK$ 74.85
(exc. GST)
units
Per unit
1 - 4
HK$74.85
5 - 9
HK$73.34
10 - 49
HK$68.21
50 - 99
HK$62.34
100 +
HK$55.01
Packaging Options:
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