STMicroelectronics STGF6NC60HD IGBT, 6 A 600 V, 3-Pin TO-220FP

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 6 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 20 W
Package Type TO-220FP
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10.4mm
Width 4.6mm
Height 16.4mm
Dimensions 10.4 x 4.6 x 16.4mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
55 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
HK$ 10.078
(exc. GST)
units
Per unit
Per Pack*
5 - 20
HK$10.078
HK$50.39
25 - 45
HK$8.568
HK$42.84
50 - 245
HK$6.576
HK$32.88
250 - 495
HK$5.83
HK$29.15
500 +
HK$4.61
HK$23.05
*price indicative
Packaging Options:
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