STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 795-7041
- Mfr. Part No.:
- STGB10NC60HDT4
- Manufacturer:
- STMicroelectronics
925 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$14.458
| Units | Per unit | Per Pack* |
| 5 - 245 | HK$14.458 | HK$72.29 |
| 250 - 495 | HK$14.096 | HK$70.48 |
| 500 + | HK$13.88 | HK$69.40 |
| *price indicative | ||
- RS Stock No.:
- 795-7041
- Mfr. Part No.:
- STGB10NC60HDT4
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
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IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 65 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 9.35 x 4.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |