- RS Stock No.:
- 792-5789
- Mfr. Part No.:
- STGP30H65F
- Manufacturer:
- STMicroelectronics
Discontinued product
- RS Stock No.:
- 792-5789
- Mfr. Part No.:
- STGP30H65F
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 260 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |