STMicroelectronics STGW20V60F IGBT, 20 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 791-7621
- Mfr. Part No.:
- STGW20V60F
- Manufacturer:
- STMicroelectronics
45 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$28.71
| Units | Per unit | Per Pack* |
| 5 - 5 | HK$28.71 | HK$143.55 |
| 10 - 10 | HK$27.994 | HK$139.97 |
| 15 + | HK$27.562 | HK$137.81 |
| *price indicative | ||
- RS Stock No.:
- 791-7621
- Mfr. Part No.:
- STGW20V60F
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
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IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 167 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |