IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 791-7425
- Mfr. Part No.:
- IXGP20N120B3
- Manufacturer:
- IXYS
22 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 2)
HK$49.855
| Units | Per unit | Per Pack* |
| 2 - 12 | HK$49.855 | HK$99.71 |
| 14 - 24 | HK$48.61 | HK$97.22 |
| 26 + | HK$47.86 | HK$95.72 |
| *price indicative | ||
- RS Stock No.:
- 791-7425
- Mfr. Part No.:
- IXGP20N120B3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 180 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 20kHz |
| Transistor Configuration | Single |
| Dimensions | 10.66 x 4.83 x 16mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |