IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247

  • RS Stock No. 791-7413
  • Mfr. Part No. IXGH72N60B3
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 540 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 40kHz
Transistor Configuration Single
Length 16.26mm
Width 5.3mm
Height 21.46mm
Dimensions 16.26 x 5.3 x 21.46mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
33 In stock for delivery within 3 working days
Price Each
HK$ 47.30
(exc. GST)
units
Per unit
1 - 9
HK$47.30
10 - 29
HK$46.37
30 - 59
HK$45.45
60 - 89
HK$44.57
90 +
HK$43.71
Packaging Options:
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