ON Semiconductor HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 70 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.87mm
Width 4.82mm
Height 20.82mm
Dimensions 15.87 x 4.82 x 20.82mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
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Price Each
HK$ 44.28
(exc. GST)
units
Per unit
1 - 4
HK$44.28
5 - 14
HK$39.97
15 - 24
HK$38.73
25 +
HK$38.33
Packaging Options:
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