Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS

  • RS Stock No. 601-2807
  • Mfr. Part No. GT30J322(Q)
  • Manufacturer Toshiba
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-3PNIS
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.8mm
Width 5mm
Height 21mm
Dimensions 15.8 x 5 x 21mm
Maximum Operating Temperature +150 °C
15 Within 3 working day(s) (Global stock)
10 Within 3 working day(s) (Global stock)
Price Each
HK$ 39.31
(exc. GST)
Per unit
1 - 19
20 - 49
50 - 99
100 +