STMicroelectronics STGWT20H65FB IGBT, 40 A 650 V, 3-Pin TO, Through Hole

RS Stock No.:: 192-4809
Mfr. Part No.:: STGWT20H65FB
Manufacturer:: STMicroelectronics

STMicroelectronics STGWT20H65FB IGBT, 40 A 650 V, 3-Pin TO, Through Hole

On back order for despatch 23/04/2025, delivery within 3 working days

Added

Price Each (In a Pack of 2)

HK$27.29

Units	Per unit	Per Pack*
2 - 6	HK$27.29	HK$54.58
8 - 14	HK$26.61	HK$53.22
16 +	HK$26.20	HK$52.40
*price indicative

RS Stock No.:: 192-4809
Mfr. Part No.:: STGWT20H65FB
Manufacturer:: STMicroelectronics

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: KR

Product Details

These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: TJ= 175 °C
High speed switching series
Minimized tail current
VCE(sat)= 1.55 V (typ.) @ IC= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	1
Maximum Power Dissipation	168 W
Package Type	TO
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.8 x 5 x 20.1mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C