ON Semiconductor, FGY60T120SQDN

Product overview and Technical data sheets
Legislation and Compliance
Non Compliant
Product Details

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Applications
Solar Inverter
EV charging station
End Products
Industrial

Specifications
Attribute Value
Maximum Continuous Collector Current 120 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±25V
Number of Transistors 1
Maximum Power Dissipation 517 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.87mm
Width 4.82mm
Height 20.82mm
Dimensions 15.87 x 4.82 x 20.82mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Gate Capacitance 7147pF
446 In stock for delivery within 3 working days
Price Each
HK$ 77.97
(exc. GST)
units
Per unit
1 - 9
HK$77.97
10 - 99
HK$74.08
100 - 999
HK$70.38
1000 - 2999
HK$54.36
3000 +
HK$46.35
Packaging Options:
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