onsemi FGY60T120SQDN IGBT, 120 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 186-1455
- Mfr. Part No.:
- FGY60T120SQDN
- Manufacturer:
- onsemi
Discontinued product
- RS Stock No.:
- 186-1455
- Mfr. Part No.:
- FGY60T120SQDN
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Non Compliant
Product Details
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Applications
Solar Inverter
EV charging station
End Products
Industrial
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Applications
Solar Inverter
EV charging station
End Products
Industrial
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 517 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.87 x 4.82 x 20.82mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 7147pF |