DiodesZetex DGTD65T60S2PT IGBT, 100 A, 180 (Pulsed) A 650 V, 3-Pin TO-247

  • RS Stock No. 182-6874
  • Mfr. Part No. DGTD65T60S2PT
  • Manufacturer DiodesZetex
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential.

High Speed Switching & Low Power Loss
VCE(sat) = 1.85V @ IC = 60A
High Input Impedance
trr = 110ns (typ) @ diF/dt = 500A/μs
Eoff = 0.53mJ @ TC=25°C
Maximum Junction Temperature 175°C
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
UPS
Welder
Solar Inverter
IH Cooker

Specifications
Attribute Value
Maximum Continuous Collector Current 100 A, 180 (Pulsed) A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Number of Transistors 1
Maximum Power Dissipation 428 W
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Length 16.26mm
Width 5.31mm
Height 21.46mm
Dimensions 16.26 x 5.31 x 21.46mm
Minimum Operating Temperature -40 °C
Gate Capacitance 2327pF
Maximum Operating Temperature +175 °C
450 In stock for delivery within 3 working days
Price Each (In a Tube of 30)
HK$ 27.644
(exc. GST)
units
Per unit
Per Tube*
30 - 60
HK$27.644
HK$829.32
90 - 120
HK$25.52
HK$765.60
150 +
HK$23.697
HK$710.91
*price indicative
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